The new lab is operated by the Device Solutions America (DSA) division based in Silicon Valley, California. The facility is responsible for overseeing Samsung’s semiconductor manufacturing in the US, as well as developing an improved version of DRAM that will enable Samsung to maintain its leadership in the global 3D memory chip market.

In October 2023, the South Korean tech giant said it was developing new 3D structures for sub-10 nanometer DRAM that could scale up single-chip capacities to more than 100 gigabits. In 2013, Samsung became the first semiconductor company to successfully commercialize 3D vertical NAND flash memory, a solution that connects chip stacks through holes in a vertically stacked 3D space.